document number: 91238 www.vishay.com s11-0444-rev. b, 14-mar-11 1 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 power mosfet IRFP9140, sihfp9140 vishay siliconix features ? dynamic dv/dt rating ? repetitive avalanche rated ? p-channel ? isolated central mounting hole ? 175 c operating temperature ?fast switching ? ease of paralleling ? compliant to rohs directive 2002/95/ec description third generation power mosfets from vishay provide the designer with the best combi nation of fast switching, ruggedized device design , low on-resistance and cost-effectiveness. the to-247ac package is preferred for commercial-industrial applic ations where higher power levels preclude the use of to-220ab devices. the to-247ac is similar but superior to the earlier to-218 package because of its isolated mouting hole. it also provides greater creepage distance between pins to meet the requirements of most safety specifications. notes a. repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11). b. v dd = - 25 v, starting t j = 25 c, l = 3.3 mh, r g = 25 , i as = - 21 a (see fig. 12). c. i sd - 21 a, di/dt 200 a/s, v dd v ds , t j 175 c. d. 1.6 mm from case. product summary v ds (v) - 100 r ds(on) ( )v gs = - 10 v 0.20 q g (max.) (nc) 61 q gs (nc) 14 q gd (nc) 29 configuration single s g d p-channel mosfet to-247ac g d s available rohs* compliant ordering information package to-247ac lead (pb)-free IRFP9140pbf sihfp9140-e3 snpb IRFP9140 sihfp9140 absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds - 100 v gate-source voltage v gs 20 continuous drain current v gs at - 10 v t c = 25 c i d - 21 a t c = 100 c - 15 pulsed drain current a i dm - 84 linear derating factor 1.2 w/c single pulse avalanche energy b e as 960 mj repetitive avalanche current a i ar - 21 a repetitive avalanche energy a e ar 18 mj maximum power dissipation t c = 25 c p d 180 w peak diode recovery dv/dt c dv/dt - 5.5 v/ns operating junction and storage temperature range t j , t stg - 55 to + 175 c soldering recommendations (p eak temperature) for 10 s 300 d mounting torque 6-32 or m3 screw 10 lbf in 1.1 n m * pb containing terminations are not rohs compliant, exemptions may apply
www.vishay.com document number: 91238 2 s11-0444-rev. b, 14-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 IRFP9140, sihfp9140 vishay siliconix notes a. repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11). b. pulse width 300 s; duty cycle 2 %. thermal resistance ratings parameter symbol typ. max. unit maximum junction-to-ambient r thja -40 c/w case-to-sink, flat, greased surface r thcs 0.24 - maximum junction-to-case (drain) r thjc -0.83 specifications (t j = 25 c, unless otherwise noted) parameter symbol test cond itions min. typ. max. unit static drain-source brea kdown voltage v ds v gs = 0 v, i d = - 250 a - 100 - - v v ds temperature coefficient v ds /t j reference to 25 c, i d = - 1 ma - - 0.087 - v/c gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 2.0 - - 4.0 v gate-source leakage i gss v gs = 20 v - - 100 na zero gate voltage drain current i dss v ds = - 100 v, v gs = 0 v - - - 100 a v ds = - 80 v, v gs = 0 v, t j = 150 c - - - 500 drain-source on-state resistance r ds(on) v gs = - 10 v i d = - 13 a b --0.20 forward transconductance g fs v ds = - 50 v, i d = - 13 a b 6.2 - - s dynamic input capacitance c iss v gs = 0 v, v ds = - 25 v, f = 1.0 mhz, see fig. 5 - 1400 - pf output capacitance c oss - 590 - reverse transfer capacitance c rss - 140 - total gate charge q g v gs = - 10 v i d = - 19 a, v ds = - 80 v, see fig. 6 and 13 b --61 nc gate-source charge q gs --14 gate-drain charge q gd --29 turn-on delay time t d(on) v dd = - 50 v, i d = - 19 a, r g = 9.1 , r d = 2.4 , see fig. 10 b -16- ns rise time t r -73- turn-off delay time t d(off) -34- fall time t f -57- internal drain inductance l d between lead, 6 mm (0.25") from package and center of die contact -5.0- nh internal source inductance l s -13- drain-source body diode characteristics continuous source-dr ain diode current i s mosfet symbol showing the integral reverse p - n junction diode --- 21 a pulsed diode forward current a i sm --- 84 body diode voltage v sd t j = 25 c, i s = - 21 a, v gs = 0 v b --- 5.0v body diode reverse recovery time t rr t j = 25 c, i f = - 19 a, di/dt = 100 a/s b - 130 260 ns body diode reverse recovery charge q rr - 0.35 0.70 c forward turn-on time t on intrinsic turn-on time is negligible (turn-on is dominated by l s and l d ) d s g s d g
document number: 91238 www.vishay.com s11-0444-rev. b, 14-mar-11 3 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 IRFP9140, sihfp9140 vishay siliconix typical characteristics (25 c, unless otherwise noted) fig. 1 - typical output characteristics, t c = 25 c fig. 2 - typical output characteristics, t c = 175 c fig. 3 - typical transfer characteristics fig. 4 - normalized on-resistance vs. temperature
www.vishay.com document number: 91238 4 s11-0444-rev. b, 14-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 IRFP9140, sihfp9140 vishay siliconix fig. 5 - typical capacitance vs. drain-to-source voltage fig. 6 - typical gate charge vs. gate-to-source voltage fig. 7 - typical source-drain diode forward voltage fig. 8 - maximum safe operating area
document number: 91238 www.vishay.com s11-0444-rev. b, 14-mar-11 5 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 IRFP9140, sihfp9140 vishay siliconix fig. 9 - maximum drain current vs. case temperature fig. 10a - switching time test circuit fig. 10b - switching time waveforms fig. 11 - maximum effective transient thermal impedance, junction-to-case pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. - 10 v + - v ds v dd v gs 10 % 90 % v ds t d(on) t r t d(off) t f
www.vishay.com document number: 91238 6 s11-0444-rev. b, 14-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 IRFP9140, sihfp9140 vishay siliconix fig. 12a - unclamped inductive test circuit fig. 12b - unclamped inductive waveforms fig. 12c - maximum avalanche energy vs. drain current fig. 13a - basic gate charge waveform fig. 13b - gate charge test circuit r g i as 0.01 t p d.u.t l v ds + - v dd - 10 v var y t p to obtain required i as i as v ds v dd v ds t p q gs q gd q g v g charge - 10 v d.u.t. - 3 ma v gs v ds i g i d 0.3 f 0.2 f 50 k 12 v current regulator current sampling resistors same type as d.u.t. + -
document number: 91238 www.vishay.com s11-0444-rev. b, 14-mar-11 7 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 IRFP9140, sihfp9140 vishay siliconix fig. 14 - for p-channel vishay siliconix maintains worldw ide manufacturing capability. prod ucts may be manufactured at on e of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents su ch as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91238 . p.w. period di/dt diode recovery dv/dt body diode forward drop body diode forward current driver gate drive inductor current d = p.w. period + - - - - + + + peak dio d e recovery d v/ d t test circuit ? dv/dt controlled by r g ? d.u.t. - device under te s t d.u.t. circuit layout con s ideration s ? low stray inductance ? g round plane ? low leakage inductance current tran s former r g ? compliment n-channel of d.u.t. for driver v dd ? i s d controlled by duty factor d note note a. v gs = - 5 v for logic level and - 3 v drive device s v gs = - 10 v a d.u.t. l s d waveform d.u.t. v d s waveform v dd re-applied voltage ripple 5 % i s d rever s e recovery current
package information www.vishay.com vishay siliconix revision: 01-jul-13 1 document number: 91360 for technical questions, contact: hvm@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 to-247ac (high voltage) notes 1. dimensioning and tolera ncing per asme y14.5m-1994. 2. contour of slot optional. 3. dimension d and e do not include mold fl ash. mold flash shall not ex ceed 0.127 mm (0.005") per side . these dimens ions are mea sured at the outermost extremes of the plastic body. 4. thermal pad contour optional with dimensions d1 and e1. 5. lead finish un controlled in l1. 6. ? p to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154"). 7. outline conforms to jedec outline to-247 with exceptio n of dimension c. 8. xian and mingxin actually photo. millimeters inches millimeters inches dim. min. max. min. max. dim. min. max. min. max. a 4.58 5.31 0.180 0.209 d2 0.51 1.30 0.020 0.051 a1 2.21 2.59 0.087 0.102 e 15.29 15.87 0.602 0.625 a2 1.17 2.49 0.046 0.098 e1 13.72 - 0.540 - b 0.99 1.40 0.039 0.055 e 5.46 bsc 0.215 bsc b1 0.99 1.35 0.039 0.053 ? k 0.254 0.010 b2 1.53 2.39 0.060 0.094 l 14.20 16.25 0.559 0.640 b3 1.65 2.37 0.065 0.093 l1 3.71 4.29 0.146 0.169 b4 2.42 3.43 0.095 0.135 n 7.62 bsc 0.300 bsc b5 2.59 3.38 0.102 0.133 ? p 3.51 3.66 0.138 0.144 c 0.38 0.86 0.015 0.034 ? p1 - 7.39 - 0.291 c1 0.38 0.76 0.015 0.030 q 5.31 5.69 0.209 0.224 d 19.71 20.82 0.776 0.820 r 4.52 5.49 0.178 0.216 d1 13.08 - 0.515 - s 5.51 bsc 0.217 bsc ecn: x13-0103-rev. d, 01-jul-13 dwg: 5971 0.10 a c m m e e/2 (2) (4) r/2 b 2 x r s d see view b 2 x e b4 3 x b 2 x b2 l c l1 1 2 3 q d a a2 a a a1 c ? k b d m m a ?p (datum b) ?p1 d1 4 e1 0.01 b d m m view a - a thermal pad d2 dde e c c view b (b1, b3, b5) base metal c1 (b, b2, b4) section c - c, d - d, e - e (c) planting 4 3 5 7 4 4 4 lead assignments 1. gate 2. drain 3. source 4. drain
legal disclaimer notice www.vishay.com vishay revision: 02-oct-12 1 document number: 91000 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vish ays terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vi shay product could result in personal injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized vishay personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of vishay. product names and markings noted herein may be trad emarks of their respective owners. material category policy vishay intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some vishay documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. vishay intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some vishay documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards.
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